The Influence of Precursor Temperature on The Properties of Erbium-Doped Zirconium Telluride Thin Film Material Via Electrochemical Deposition

International Journal of Applied Physics

© 2020 by SSRG - IJAP Journal

Volume 7 Issue 1

Year of Publication : 2020

Authors : Ikhioya I. Lucky, Ezeorba M. Chigozirim, Okoroh Doris, , Anene C. Rita, Obasi C. Ogonnaya

10.14445/23500301/IJAP-V7I1P115

How to Cite?

Ikhioya I. Lucky, Ezeorba M. Chigozirim, Okoroh Doris, , Anene C. Rita, Obasi C. Ogonnaya, "The Influence of Precursor Temperature on The Properties of Erbium-Doped Zirconium Telluride Thin Film Material Via Electrochemical Deposition," SSRG International Journal of Applied Physics, vol. 7,  no. 1, pp. 102-109, 2020. Crossref, https://doi.org/10.14445/23500301/IJAP-V7I1P115

Abstract:

The study of the influence precursor temperature on the structural, morphological and optical properties of erbium doped zirconium telluride using ECD method where the aqueous solution of the cationic precursor was 0.1 mol solution of ZrOCl2.8H2O and the anionic precursor was 0.01 mol solution of Tellurdioxide (TeO2) was prepared by dissolving with 7 ml of Hydrochloric acid (HCl), and then 0.05 mol solution of Erbium trioxide (Er2O3) was used as the dopant. The films were characterized via UV-1800 Visible Spectrophotometer, Bruker D8 Advance X-ray diffractometer with Cu Kα line (λ = 1.54056Å) in 2θ range from 10° - 90°and Scanning Electron Microscopy. The X-ray diffractometer pattern of ZrTe and Er-ZrTe thin film showed prominent crystalline peaks that are in agreement with the JCPDS card number 046-1088 and 041-1445 for ZrTe and Er-ZrTe thin film with a cubic phase indexed at (111), (200), (201), and (210) orientations and ZrTe and Er-ZrTe Films are polycrystalline with intense peaks at (111) and (210) planes at 2θ value of 26.354o and 51.360o respectively. Higher precursor temperature decreases peak intensity towards amorphous phase. The surface morphology of ZrTe thin films shows the particles are agglomerated which resulted from the formation of large grains due to effect of carbon electrode used in the process of deposition and energy band gap of 1.55 – 1.51 eV was obtained.

Keywords:

Er doped ZrTe; ECD; EDX; XRD; SEM; Optical Properties

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