Water Clusters in Semiconductor Detectors with Amorphous Carbon/Si Crystalline Hetero-Structures as Capturing or Scattering Centers for Free Charged Particles

International Journal of Applied Physics

© 2018 by SSRG - IJAP Journal

Volume 5 Issue 3

Year of Publication : 2018

Authors : Ohanyan Karapet, Badalyan Hamlet, Baghdasaryan Naira

10.14445/23500301/IJAP-V5I3P102

How to Cite?

Ohanyan Karapet, Badalyan Hamlet, Baghdasaryan Naira, "Water Clusters in Semiconductor Detectors with Amorphous Carbon/Si Crystalline Hetero-Structures as Capturing or Scattering Centers for Free Charged Particles," SSRG International Journal of Applied Physics, vol. 5,  no. 3, pp. 7-10, 2018. Crossref, https://doi.org/10.14445/23500301/IJAP-V5I3P102

Abstract:

In semiconductor type detectors one of the formation mechanisms of the capture or scattering centers (traps) is the diffusion of the water in the silicon’s volume, where water molecules endowed with the dipole momentum by blocking in the micro-defects of the Si crystal generate there water clusters which could be considered, for the charged particles, as capture or scattering centers, and for the heavy charged particles - interaction centers. In the present article the features of water cluster formation in micro-defects of Si mono-crystalline as well as the distribution of electrical field potential in the regions of this type of structures are modeled and investigated

Keywords:

trap, water clusters, micro-defect, Si crystal, semiconductor detector

References:

[1] H.GBadalyan andG. L.Grigoryan,On the role of an aqueous nanolayer in the reaction of hydrogen peroxide vapor with a crystalline ZnO. Chemical Physics, 25(5), 17-20, 2006.
[2] K.Bedner, V. A.Guzenko, A.Tarasov, M.Wipf ,R. L.Stoop, S.Rigante,J. Brunner, W.Fu, C.David, M.Calame, J.GobrechtandC. Schönenberger.Investigation of the dominant 1/f noise source in silicon nanowire sensors. Sensors and Actuators B: Chemical, 191, 270-275, 2014>
[3] E.Borovitskayaand M.S. Shur,On theory of 1/f noise in semiconductors. Solid-State Electronics, 45(7), 1067-1069, 2001.
[4] J.Carrasco, A.Michaelides, M.Forster, S.Haq, R.Ravaland A. Hodgson, A one-dimensional ice structure built from pentagons. Nature Materials, 8, 427–431, 2009.
[5] M. A. Henderson, The interaction of water with solid surfaces: fundamental aspects revisited. Surface Science Reports, 46(1), 1-308, 2002.
[6] A.I.Kolesnikov, G. F.Reiter, N.Choudhury, T. R.Prisk, E.Mamontov, A.Podlesnyak, G.Ehlers, A. G.Seel, D. J.Wesolowski and L. M.Anovitz, Quantum Tunneling of Water in Beryl.A New State of the Water Molecule. Phys. Rev. Lett. 116(16), 167802, 2016.
[7] K.S.Ohanyan, Investigation of Characteristics of Semiconductor Detectors of a-C/n-Si Heterostructure and p-n Junctions by Means of Registration of Charged Particles.Armenian Journal of Physics, 6(3), 132-140, 2013.
[8] E.I.Shabunina,M. E.Levinshtein, N. M.Shmidt,P. A.IvanovandJ. W.Palmour, 1/f noise in forward biased high voltage 4H-SiC Schottky diodes. Solid-State Electronics, 96, 44-47, 2014.
[9] J.D.Smith, C. D.Cappa,B. M. Messer, W. S.Drisdell, R. C.Cohen andR. J.Saykally, Probing the Local Structure of Liquid Water by X-ray Absorption Spectroscopy. J. Phys. Chem. B, 110, 20038-20045, 2006.
[10] T.G.Trudeau, K. C.Jena andD. K.Hore, Water Structure at Solid Surfaces of Varying Hydrophobicity. J. Phys. Chem. C, 113(46), 20002–20008, 2009.