Electron Spin Polarization In Led With Cdte As Active Layer; The Effect Of Magnetic Impurity

International Journal of Applied Physics

© 2019 by SSRG - IJAP Journal

Volume 6 Issue 2

Year of Publication : 2019

Authors : DeepanjaliMisra , Sukanta Kumar Tripathy

10.14445/23500301/IJAP-V6I2P114

How to Cite?

DeepanjaliMisra , Sukanta Kumar Tripathy, "Electron Spin Polarization In Led With Cdte As Active Layer; The Effect Of Magnetic Impurity," SSRG International Journal of Applied Physics, vol. 6,  no. 2, pp. 93-96, 2019. Crossref, https://doi.org/10.14445/23500301/IJAP-V6I2P114

Abstract:

In this paper we have presented a model based on quantum Langevin equation to investigate the variation of degree of spin polarization of electrons due to external magnetic field applied on a LED with and without magnetic impurity. Active layer of the proposed LED consists of quantum dots of CdTe. It is found that in a GaAs LED, if CdTe quantum dot layer is given then the degree of spin polarization of electrons increases considerably as compared to pure GaAs LED at the same applied magnetic field value. Again when magnetic impurity Manganese(Mn) doped CdTe quantum dot is placed in active region then the degree of spin polarization increases with increase of impurity fraction.

Keywords:

Spintronics, CdTe quantum dot, LED, Spin polarization, electron phonon interaction, Magnetic impurity (Mn)

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