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Volume 13 | Issue 4 | Year 2026 | Article Id. IJECE-V13I4P106 | DOI : https://doi.org/10.14445/23488549/IJECE-V13I4P106

Enhancing Ternary Content Addressable Memory Reliability with Error-Tolerant Convolutional Logic Code Synthesis


B. Suresh Kumar, Injeti Sowmya

Received Revised Accepted Published
07 Jan 2026 08 Feb 2026 07 Mar 2026 30 Apr 2026

Citation :

B. Suresh Kumar, Injeti Sowmya, "Enhancing Ternary Content Addressable Memory Reliability with Error-Tolerant Convolutional Logic Code Synthesis," International Journal of Electronics and Communication Engineering, vol. 13, no. 4, pp. 81-93, 2026. Crossref, https://doi.org/10.14445/23488549/IJECE-V13I4P106

Abstract

In modern computing systems, memory reliability is crucial, as errors in storage and retrieval can lead to data corruption, system crashes, or performance degradation. Traditional RAMs employ error correction techniques such as Error-Correcting Code (ECC) memory and parity bits to detect and rectify bit flips. However, these methods suffer from limitations like increased latency, higher power consumption, and limited error correction capability, making them inadequate for high-speed, high-density memory applications. To overcome these drawbacks, this work proposes a TCAM Error Correction (TCAM-EC) approach, where data is stored within Ternary Content Addressable Memory (TCAM), which is susceptible to errors during read and write operations due to process variations, aging effects, and external disturbances. To ensure robust error detection and correction, the Error-Tolerant Convolutional Logic Code Synthesis (ET-CLCS) technique is introduced, leveraging convolutional encoding principles to efficiently identify and correct errors without significantly impacting performance or power efficiency. This method enhances memory reliability while maintaining the high-speed search and retrieval capabilities of TCAM, making it suitable for applications requiring fault-tolerant memory operations in data-intensive environments.

Keywords

Data Reliability, ECC Memory, Fault-Tolerant Operations, Memory Aging Effects, Read-Write Errors.

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