Memristor & Content Addressable Memory

International Journal of Electronics and Communication Engineering

© 2016 by SSRG - IJECE Journal

Volume 3 Issue 5

Year of Publication : 2016

Authors : Ashutosh sahu and Priyanka sharma

10.14445/23488549/IJECE-V3I5P110

How to Cite?

Ashutosh sahu and Priyanka sharma, "Memristor & Content Addressable Memory," SSRG International Journal of Electronics and Communication Engineering, vol. 3,  no. 5, pp. 13-16, 2016. Crossref, https://doi.org/10.14445/23488549/IJECE-V3I5P110

Abstract:

Memristor is the fourth fundamental passive element after resistor, inductor and capacitor. Memristor is memory resistor which is two terminal device. This semiconductor device is statistically proved by a student in china Leon Chua in 1971. And discovered by scientist. R.Stanley Williams and its team in April 30,2008 in lab of HP. It consist a semiconductor of titanium dioxide in which one half is highly doped and other part is undoped. The need of memristor is high switching speed and noninstability, low power consumption. In this device we remember the last input and in simple resistor we don’t remember. This paper presents the hypothetical analysis of model of memristor and it’s application which is content addressable memory which is very advance equipment in today’s world .

Keywords:

non-instability, memristor ,resistor

References:

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