Electronic Configuration and Charge Transfer Study in (CdTe)

International Journal of Electronics and Communication Engineering

© 2018 by SSRG - IJECE Journal

Volume 5 Issue 5

Year of Publication : 2018

Authors : Fareed M. Mohammed, Fatimah I. Rashid and shahad A. Shaaban

10.14445/23488549/IJECE-V5I5P101

How to Cite?

Fareed M. Mohammed, Fatimah I. Rashid and shahad A. Shaaban, "Electronic Configuration and Charge Transfer Study in (CdTe)," SSRG International Journal of Electronics and Communication Engineering, vol. 5,  no. 5, pp. 1-3, 2018. Crossref, https://doi.org/10.14445/23488549/IJECE-V5I5P101

Abstract:

The purpose of this paper is to study theoretically the electronic configuration of (CdTe) using (FA, FE, RFA and superposition) models to the Compton profiles J(PZ) for Cd metal are determined adopting on several theoretical models by choosing different electronic arrangements (4d10-x 5s1+x) where (x=0.1,0.2,0.3,……,1). The obtained theoretical Compton profiles for (CdTe) by applying the superposition model is found to be in best agreement with the available experimental data. Charge transfer for the compound has been evaluated by ionic model for number of arrangement of (Cd+x)(Te-x). This model support a charge transfer of 0.2 electrons per Cd atom from 4d shell to 5p shell of Te atom.

Keywords:

CdTe, Compton profile, Renormalized Free Atom (RFA) model, Free Electron (FE) model, Superposition model, charge transfer.

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