Temperature Effect on the Performance Stability of Power RF Transistor Based on Advanced Electrothermal Modelling

International Journal of Electronics and Communication Engineering

© 2023 by SSRG - IJECE Journal

Volume 10 Issue 3

Year of Publication : 2023

Authors : Ahmed Almusallam

10.14445/23488549/IJECE-V10I3P102

How to Cite?

Ahmed Almusallam, "Temperature Effect on the Performance Stability of Power RF Transistor Based on Advanced Electrothermal Modelling," SSRG International Journal of Electronics and Communication Engineering, vol. 10,  no. 3, pp. 10-14, 2023. Crossref, https://doi.org/10.14445/23488549/IJECE-V10I3P102

Abstract:

This paper presents the investigation results of the electrothermal performance degradation of the RF power transistor. A comparative study of these degradations was conducted using 2D numerical modeling (ADS) for different temperature conditions. The MET model used is based on the wide signal equivalent circuit. This complex electric circuit comprises elements having a precise physical meaning acting on the component performance. Thus, any change in the value of these elements impacts performance. It makes it possible to estimate the device's dependability and lifetime more accurately. It can also be utilized to establish a link between the sorts of current failures and the electrical parameter drifts. The proposed model performs better than average in terms of accuracy and adaptability, and the results show that they are in accordance with the operational conditions

Keywords:

Characterization, Modulation, Power RF, Temperature effect, Self-heating.

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