Design of Ultra-Low-Power, Wide-Band Operational Amplifier Using the Programmable MOS Devices

International Journal of Electronics and Communication Engineering

© 2023 by SSRG - IJECE Journal

Volume 10 Issue 12

Year of Publication : 2023

Authors : Alaa H. Mohammed, Maizan Muhamad, Hanim Hussin

10.14445/23488549/IJECE-V10I12P101

How to Cite?

Alaa H. Mohammed, Maizan Muhamad, Hanim Hussin, "Design of Ultra-Low-Power, Wide-Band Operational Amplifier Using the Programmable MOS Devices," SSRG International Journal of Electronics and Communication Engineering, vol. 10,  no. 12, pp. 1-7, 2023. Crossref, https://doi.org/10.14445/23488549/IJECE-V10I12P101

Abstract:

This paper presents a new approach for designing an ultra-low power, two-stage, rail-to-rail CMOS operational amplifier operating with a dual power supply of ±0.1V using an electrical programming technique. A self-compensation technicality instead of an external compensation capacitor has been used in this work to gain higher bandwidth with guaranteed stability. In addition to using the self-compensation technique, the constant transconductance technique across the common-mode input range was used to achieve full output swing. The operational amplifier has recorded a DC gain of 136dB and a unity gain bandwidth of 4.2GHz with a phase margin of 41° and power consumption of 5.39µW. Due to using Electrically Programmed MOSFETs (EPMOSFETs) that featured perfect matching, along with the use of current sources that are independent of the power supply voltage and temperature, the operational amplifier has recorded a common-mode rejection ratio of 200dB, with a 228dB rejection ratio of power supply.

Keywords:

Op Amp, Low power, Self compensation, Constant transconductance, Electrical programming technology.

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