Optimization of the Highly Efficient GaAs Solar Cell

International Journal of Electronics and Communication Engineering

© 2024 by SSRG - IJECE Journal

Volume 11 Issue 7

Year of Publication : 2024

Authors : Jhilirani Nayak, Priyabrata Pattanaik, Dilip Kumar Mishra

10.14445/23488549/IJECE-V11I7P106

How to Cite?

Jhilirani Nayak, Priyabrata Pattanaik, Dilip Kumar Mishra, "Optimization of the Highly Efficient GaAs Solar Cell," SSRG International Journal of Electronics and Communication Engineering, vol. 11,  no. 7, pp. 53-64, 2024. Crossref, https://doi.org/10.14445/23488549/IJECE-V11I7P106

Abstract:

The paper comprehensively explores and investigates the effect of each layer of the implemented Gallium Arsenide (GaAs) solar cell, introducing an Aluminum Gallium Arsenide (AlGaAs) window layer. The device performance with respect to the critical parameters is a major concern. This strategic utilization of the AlGaAs window layer and other layers provides their effect on the key parameters of the device. The study primarily centers on the assessment of the solar cell's performance, with a particular focus on key metrics such as Short-Circuit Current (Isc), Fill Factor (FF) and Open-Circuit Voltage (Voc). The analysis encompasses an exhaustive exploration of several critical parameters, encompassing window layer thickness, window layer concentration, and radiative recombination coefficient. To achieve the research objectives, an optimization approach is pursued, commencing with the initial refinement of the solar cell device, followed by a subsequent optimization phase aimed at enhancing efficiency under the AM 1.5 spectrum, resulting in an impressive efficiency improvement of up to 34.28% (1 sun). This marked enhancement surpasses prior outcomes reported in the existing literature.

Keywords:

AlGaAs window layer, Absorber layer, Energy band gap, Mole fraction, Optimization, Radiative recombination.

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