Design of a Normally-off HEMT using Double Quantum Well Structure with Improved Breakdown Characteristics

International Journal of Electrical and Electronics Engineering

© 2022 by SSRG - IJEEE Journal

Volume 9 Issue 11

Year of Publication : 2022

Authors : Jayati Routh, Sanjay Kr. Jana

10.14445/23488379/IJEEE-V9I11P103

How to Cite?

Jayati Routh, Sanjay Kr. Jana, "Design of a Normally-off HEMT using Double Quantum Well Structure with Improved Breakdown Characteristics," SSRG International Journal of Electrical and Electronics Engineering, vol. 9,  no. 11, pp. 17-24, 2022. Crossref, https://doi.org/10.14445/23488379/IJEEE-V9I11P103

Abstract:

HEMT "High Electron Mobility Transistor" is very suitable for emerging power devices because of its high saturation drain current, high breakdown voltage, and low on-resistance (Ron). Although normally-off operation (enhancement mode) is frequently preferred for fail-safe operation and ease of design, ordinary AlGaN/GaN heterostructures are, by nature, generally ON devices. A HEMT should be a normally-off device, where the channel will not conduct without any gate bias for reasons of safety and power-saving in the OFF mode. However, one of the most important problems in normally-off devices to be resolved is current collapse, also known as enhanced dynamic Ron or drain current dispersion. The reasons for the present collapse and how to reverse it remains crucially vital even if growth and gadget technologies have significantly improved. This work examines an Al0.2Ga0.8N/GaN/Al0.25Ga0.75N/In0.15Ga0.85N/GaN normally-off HEMT that employs a double quantum well. A fieldplated device with a SiN passivation layer was investigated for reducing current collapse and increasing the breakdown voltage.

Keywords:

Breakdown voltage, GaN, HEMT, InAiN, Normally-off, Passivation, Threshold voltage, Trapping.

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