Temperature Dependence of Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Zn/Au Schottky Contacts on P-Inp

International Journal of Electrical and Electronics Engineering

© 2015 by SSRG - IJEEE Journal

Volume 2 Issue 7

Year of Publication : 2015

Authors : P. Seshu Mani, Prof. P. Narasimha Reddy

10.14445/23488379/IJEEE-V2I7P102

How to Cite?

P. Seshu Mani, Prof. P. Narasimha Reddy, "Temperature Dependence of Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Zn/Au Schottky Contacts on P-Inp," SSRG International Journal of Electrical and Electronics Engineering, vol. 2,  no. 7, pp. 6-13, 2015. Crossref, https://doi.org/10.14445/23488379/IJEEE-V2I7P102

Abstract:

 The Electrical properties of Zn/Au on P-InP has been measured in the temperature range of 180K-420K. The Current- Voltage ( I-V) and Capacitance - Voltage (C-V) characteristics are drawn from the barriers height, ideality factor and series resistance are determined. The barrier height increases from 0.35 eV to 0.50 eV and ideality factor decreases from 2.25 to 1.45 in the temperature range 180K-420K respectively. The value of Richardson constant is 5.64 x 10-6 A cm-2 K-2, which is much lower than the known value of 9.4 A cm-2 K -2 explains that the current transport mechanism must be primarily due to thermionic emission. The mean barriers height Φbo (T=OK) is 0.83 eV and standard deviation o is 139 meV indicates that the greater inhomogeneities at the interferace and thus potential fluctuation.

Keywords:

  that the greater inhomogeneities at the interferace and thus potential fluctuation.

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