Design and Performance Evaluation of a 2.4 GHz High Efficiency Power Amplifier Using GaN HEMT for 5G Applications

International Journal of Electrical and Electronics Engineering

© 2024 by SSRG - IJEEE Journal

Volume 11 Issue 6

Year of Publication : 2024

Authors : Abdoul-Aziz Arzika Amore, Franklin Manene, Shamim Nassar

10.14445/23488379/IJEEE-V11I6P101

How to Cite?

Abdoul-Aziz Arzika Amore, Franklin Manene, Shamim Nassar, "Design and Performance Evaluation of a 2.4 GHz High Efficiency Power Amplifier Using GaN HEMT for 5G Applications," SSRG International Journal of Electrical and Electronics Engineering, vol. 11,  no. 6, pp. 1-11, 2024. Crossref, https://doi.org/10.14445/23488379/IJEEE-V11I6P101

Abstract:

 This study presents a highly efficient Doherty Power Amplifier (DPA). The design uses 10W GaN High-ElectronMobility Transistors (CG2H40010F) for their characteristics, such as high breakdown voltage and power density. Advanced Design Software (ADS) was used to conduct the design. The design configuration employed a pair of individual Power Amplifiers (PAs) and connected them via a Wilkinson Power divider (WPD), which also facilitates the transmission of power towards the charge. The Doherty Power Amplifier (DPA) has been designed to offer high efficiency, output power, and wide bandwidth, in addition to expanding power back-off levels. It operates within the 2.0–2.8 GHz frequency range. The DPA topology replaces the previous quarter-wave transformer with a Wilkinson Power Combiner (WPD). Simulation results show a fractional bandwidth of 33.33%, a saturated output power of 44 dBm, and a higher gain of approximately 15 dB. Furthermore, Drain efficiency (Deff) and Power-Added Efficiency (PAE) stand at approximately 85% and 95%, respectively. After linearization, the design produced an output power of 39.171 dBm using a 100 MHz, 6.5 dB PAPR 5G NR DL signal at 2.4 GHz. Additionally, it achieved an ACLR of -56.88 dB for the adjacent channel. The outcomes of this study indicate that the proposed DPA achieves excellent drain efficiency, providing a solution for increasing DPA bandwidth while maintaining linearity. The intrinsic features of GaN devices, which allow for higher frequency operation and wider bandwidth, make this design ideal for 5G applications.

Keywords:

Doherty Power Amplifier, GaN HEMTs transistor, Power added efficiency, Drain efficiency, Wilkinson Power Divider.

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