Design and Performance Evaluation of a 2.4 GHz High Efficiency Power Amplifier Using GaN HEMT for 5G Applications

International Journal of Electrical and Electronics Engineering

© 2024 by SSRG - IJEEE Journal

Volume 11 Issue 6

Year of Publication : 2024

Authors : Abdoul-Aziz Arzika Amore, Franklin Manene, Shamim Nassar

10.14445/23488379/IJEEE-V11I6P101

How to Cite?

Abdoul-Aziz Arzika Amore, Franklin Manene, Shamim Nassar, "Design and Performance Evaluation of a 2.4 GHz High Efficiency Power Amplifier Using GaN HEMT for 5G Applications," SSRG International Journal of Electrical and Electronics Engineering, vol. 11,  no. 6, pp. 1-11, 2024. Crossref, https://doi.org/10.14445/23488379/IJEEE-V11I6P101

Abstract:

 This study presents a highly efficient Doherty Power Amplifier (DPA). The design uses 10W GaN High-ElectronMobility Transistors (CG2H40010F) for their characteristics, such as high breakdown voltage and power density. Advanced Design Software (ADS) was used to conduct the design. The design configuration employed a pair of individual Power Amplifiers (PAs) and connected them via a Wilkinson Power divider (WPD), which also facilitates the transmission of power towards the charge. The Doherty Power Amplifier (DPA) has been designed to offer high efficiency, output power, and wide bandwidth, in addition to expanding power back-off levels. It operates within the 2.0–2.8 GHz frequency range. The DPA topology replaces the previous quarter-wave transformer with a Wilkinson Power Combiner (WPD). Simulation results show a fractional bandwidth of 33.33%, a saturated output power of 44 dBm, and a higher gain of approximately 15 dB. Furthermore, Drain efficiency (Deff) and Power-Added Efficiency (PAE) stand at approximately 85% and 95%, respectively. After linearization, the design produced an output power of 39.171 dBm using a 100 MHz, 6.5 dB PAPR 5G NR DL signal at 2.4 GHz. Additionally, it achieved an ACLR of -56.88 dB for the adjacent channel. The outcomes of this study indicate that the proposed DPA achieves excellent drain efficiency, providing a solution for increasing DPA bandwidth while maintaining linearity. The intrinsic features of GaN devices, which allow for higher frequency operation and wider bandwidth, make this design ideal for 5G applications.

Keywords:

Doherty Power Amplifier, GaN HEMTs transistor, Power added efficiency, Drain efficiency, Wilkinson Power Divider.

References:

[1] Ahmed M. Abdulkhaleq et al., “A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations,” Broadband Communications, Networks, and Systems, pp. 446-454, 2019.
[CrossRef] [Google Scholar] [Publisher Link]
[2] K.S. Pradeep, “Design and Implementation of Class-F GaN HEMT Power Amplifier for S-Band Radar,” 2017 International Conference on Electrical, Electronics, Communication, Computer, and Optimization Techniques (ICEECCOT), Mysuru, India, pp. 103-109, 2017.  
[CrossRef] [Google Scholar] [Publisher Link]
[3] Ian F. Akyildiz, Chong Han, and Shuai Nie, “Combating the Distance Problem in the Millimeter Wave and Terahertz Frequency Bands,” IEEE Communications Magazine, vol. 56, no. 6, pp. 102-108, 2018.
[CrossRef] [Google Scholar] [Publisher Link]
[4] Tanweer Alam, “A Reliable Communication Framework and Its Use in Internet of Things (IoT),” International Journal of Scientific Research in Computer Science, Engineering and Information Technology, vol. 3, no. 5, pp. 450-456, 2018.
[Google Scholar] [Publisher Link]
[5] Shribala Nagul et al., “A Review on 5G Modulation Schemes and their Comparisons for Future Wireless Communications,” 2018 Conference on Signal Processing and Communication Engineering Systems (SPACES), Vijayawada, India, pp. 72-76, 2018.
[CrossRef] [Google Scholar] [Publisher Link]
[6] Ritu Kumari, and Mridul Chawla, “Review of PAPR Reduction Techniques for 5G System,” International Journal of Electronics and Communication Engineering, vol. 10, no. 1, pp. 35-44, 2017.
[Google Scholar] [Publisher Link]
[7] Maryam Sajedin et al., “Design of Asymmetrical Doherty GaN HEMT Power Amplifiers for 4G Applications,” Broadband Communications, Networks, and Systems, pp. 455-465, 2019.
[CrossRef] [Google Scholar] [Publisher Link]
[8] Gary A. Thiele, and Warren L. Stutzman, Antenna Theory and Design, 3rd ed., Wiley, 2012.
[Google Scholar] [Publisher Link]
[9] Khaled Bathich, “Analysis and Design of Efficiency-Enhancement Microwave Power Amplifiers Using the Doherty Technique,” Doctoral Thesis, Technischen Universit¨at Berlin, 2013.
[CrossRef] [Google Scholar] [Publisher Link]
[10] Ahmed M. Abdulkhaleq et al., “Recent Developments of Dual-Band Doherty Power Amplifiers for Upcoming Mobile Communications Systems,” Electronics, vol. 8, no. 6, pp. 1-19, 2019.
[CrossRef] [Google Scholar] [Publisher Link]
[11] Kaan Koca, Hüseyin Şerif Savcı, and Sedef Kent, “A Wideband High-efficiency Doherty Power Amplifier for LTE,” 2023 33rd International Conference Radioelektronika, Pardubice, Czech Republic, pp. 1-5, 2023.
[CrossRef] [Google Scholar] [Publisher Link]
[12] Jiancong Du, Zhiqun Li, and Zhennan Li, “A 2.4 GHz Doherty Power Amplifier Based on Voltage Combining in 22 nm CMOS,” 2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST), Athens, Greece, pp. 1-4, 2023.
[CrossRef] [Google Scholar] [Publisher Link]
[13] Yuki Takagi et al., “High-Efficiency Asymmetric Doherty Power Amplifier with Spurious Suppression Circuit,” 2020 50th European Microwave Conference (EuMC), Utrecht, Netherlands, pp. 308-311, 2021.
[CrossRef] [Google Scholar] [Publisher Link]
[14] Bin Wang et al., “High-Efficiency Doherty Power Amplifier Based on an Asymmetric Structure,” Engineering World, vol. 2, pp. 264-269, 2020.
[Google Scholar] [Publisher Link]
[15] Aritra Banerjee, Lei Ding, and Rahmi Hezar, “A High Efficiency Multi-Mode Outphasing RF Power Amplifier with 31.6 dBm Peak Output Power in 45nm CMOS,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 67, no. 3, pp. 815-828, 2020.
[CrossRef] [Google Scholar] [Publisher Link]
[16] Shichang Chen et al., “A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension,” Wireless Communications and Mobile Computing, 2018.
[CrossRef] [Google Scholar] [Publisher Link]
[17] Jingchang Nan et al., “A Broadband Doherty Power Amplifier with a New Load Modulation Network,” IEEE Access, vol. 9, pp. 58025-58033, 2021.
[CrossRef] [Google Scholar] [Publisher Link]
[18] Ardit Veshaj et al., “Design Strategy of a 2.8-3.6 GHz 20 W GaN Doherty Power Amplifier,” 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff, UK, pp. 1-3, 2020.
[CrossRef] [Google Scholar] [Publisher Link]
[19] Joonhyung Kim, “Highly Efficient Asymmetric Class-F-1/F GaN Doherty Amplifier,” IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 9, pp. 4070-4077, 2018.
[CrossRef] [Google Scholar] [Publisher Link]
[20] Ahmed Abdulkhaleq et al., “Three-Way Doherty Power Amplifier Using Class-F Amplifier for More Efficient Mobile Communications,” Proceedings of the 1st International Multi-Disciplinary Conference Theme: Sustainable Development and Smart Planning, pp. 1-10, 2020.
[CrossRef] [Google Scholar] [Publisher Link]
[21] Mohsen Hashemi et al., “A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier,” IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 10, pp. 4232-4245, 2019.
[CrossRef] [Google Scholar] [Publisher Link]
[22] Zhiwei Zhang et al., “A Broadband Doherty Power Amplifier with Hybrid Class-EFJ Mode,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 67, no. 12, pp. 4270-4280, 2020.
[CrossRef] [Google Scholar] [Publisher Link]
[23] Paolo Colantonio, Franco Giannini, and Ernesto Limiti, High Efficiency RF and Microwave Solid State Power Amplifiers, Wiley, 2009.
[CrossRef] [Google Scholar] [Publisher Link]
[24] Maryam Sajedin et al., “A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications,” Electronics, vol. 8, no. 6, pp. 1-31, 2019.
[CrossRef] [Google Scholar] [Publisher Link]
[25] Vittorio Camarchia et al., “The Doherty Power Amplifier: Review of Recent Solutions and Trends,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 2, pp. 559-571, 2015.
[CrossRef] [Google Scholar] [Publisher Link]
[26] MACOM, CG2H40010, Datasheet R.F. POWER, and G. Hemt, 2023. [Online]. Available: https://www.macom.com/products/productdetail/CG2H40010