3D Simulation-Based Comparison of Bulk Acoustic Wave FBAR and SMR Technology

International Journal of Electrical and Electronics Engineering

© 2024 by SSRG - IJEEE Journal

Volume 11 Issue 10

Year of Publication : 2024

Authors : Poorvi K. Joshi, Awani S. Khobragade, Pradnya Jadhav, Khushi P. Sindhi

10.14445/23488379/IJEEE-V11I10P115

How to Cite?

Poorvi K. Joshi, Awani S. Khobragade, Pradnya Jadhav, Khushi P. Sindhi, "3D Simulation-Based Comparison of Bulk Acoustic Wave FBAR and SMR Technology," SSRG International Journal of Electrical and Electronics Engineering, vol. 11,  no. 10, pp. 150-155, 2024. Crossref, https://doi.org/10.14445/23488379/IJEEE-V11I10P115

Abstract:

Solidly Mounted Resonators (SMRs) and Film Bulk Acoustic Resonators (FBARs) are essential components in RF and microwave applications, each having distinct features that are well-suited to various circumstances. SMRs have a piezoelectric layer sandwiched between two electrodes above a substrate, which ensures a strong construction. In contrast, FBARs use thin piezoelectric sheets on a substrate, resulting in a far thinner design. This thickness difference extends to their operational frequency ranges: SMRs mostly function at lower frequencies, peaking in the gigahertz region. FBARs thrive in higher frequency domains spanning several to tens of gigahertz. This paper compares FBARs with SMRs.The Figure of Merit (FOM) of the BAW resonator is the product of the coupling coefficient and quality factor. The greater kt*Qp product results in better insertion loss across a wider temperature range, allowing longer "hang-time" at the band edges. SMR resonators have a Q value of 970, whereas free-standing membranes have Q values of about 2170. One probable rationale for membrane devices' better Q relative to SMRs is that there are fewer causes of Q loss, resulting in more efficient energy retention within the membrane.

Keywords:

SMR.FBAR, Quality factor, Losses, RF applications.

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