Voltage Over Scaling Based GDI Approximate Adder

International Journal of Electrical and Electronics Engineering
© 2025 by SSRG - IJEEE Journal
Volume 12 Issue 1
Year of Publication : 2025
Authors : G.R. Mahendra Babu, K.P. Sridhar
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How to Cite?

G.R. Mahendra Babu, K.P. Sridhar, "Voltage Over Scaling Based GDI Approximate Adder," SSRG International Journal of Electrical and Electronics Engineering, vol. 12,  no. 1, pp. 47-62, 2025. Crossref, https://doi.org/10.14445/23488379/IJEEE-V12I1P106

Abstract:

Machine Learning (ML) models are deployed in resource-constrained edge and fog devices in the Internet of Things (IoT) paradigm. The ML models are trained with Convolutional Neural Networks (CNN) which directly influence the device performances like power, speed, and network bandwidth. In such cases, efficient hardware devices are needed to implement the ML models. This work aims to identify performance-efficient techniques and adapt them to the proposed design. This paper proposes Voltage Over Scaling (VOS) based Gate Diffusion Input (GDI) Approximate Full Adder (AFA) identified as VOS-GAFA at the transistor level. The proposed VOS-GAFA is used to develop the 8-bit VOS-based Ripple Carry Adder (RCA) identified as VOS-RCA. The experimental results of the proposed VOS-GAFA have shown 56.11 % and 44 % reduction of power consumption and transistor count, respectively, when compared to the best existing approximate full adder. Moreover, VOS-GAFA has a high Noise Margin (NM) value that provides proper circuit operation and robustness against noise sources. VOS-RCA showed improved power, PDP, and delay values when compared to existing 8-bit RCA, and hence, it is appropriate for resource-constrained edge and fog IoT devices. This research work is carried out using the cadence virtuoso tool at gpdk45nm technology.

Keywords:

Approximate computing, Gate diffusion input, Low power full adder, Machine Learning, Voltage over scaling.

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