A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD

International Journal of Electrical and Electronics Engineering

© 2025 by SSRG - IJEEE Journal

Volume 12 Issue 2

Year of Publication : 2025

Authors : Yeonbae Chung

10.14445/23488379/IJEEE-V12I2P105

How to Cite?

Yeonbae Chung, "A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD," SSRG International Journal of Electrical and Electronics Engineering, vol. 12,  no. 2, pp. 39-47, 2025. Crossref, https://doi.org/10.14445/23488379/IJEEE-V12I2P105

Abstract:

This article describes a compact Lateral DMOS Transistor (LDMOST) model incorporated directly into SPICE source code and presents its application to power IC technology CAD. The complete model combines a previously developed semi-numerical static model and a built-in parasitic component model with a charge-based dynamic model. This composite model is based on device physics; thus, it accounts well for important power MOSFET characteristics such as non-uniformly doped channels, reverse-recovery transients and the non-planar drift region. The measurements from the power MOSFET samples support the predictive model, verified in extensive SPICE simulations of several high-voltage circuits. This LDMOST model might be useful in computer-aided optimal design of smart power ICs.

Keywords:

Charge-based dynamic model, High-voltage MOSFET, Lateral DMOS transistor, Parasitic BJT model, Power IC technology CAD.

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