Parametric Variations of Transistor Doping Profiles for Ultra Low Power Applications

International Journal of VLSI & Signal Processing

© 2018 by SSRG - IJVSP Journal

Volume 5 Issue 3

Year of Publication : 2018

Authors : Xhino M. Domi, Emadelden Fouad and Muhammad S. Ullah

10.14445/23942584/IJVSP-V5I3P103

How to Cite?

Xhino M. Domi, Emadelden Fouad and Muhammad S. Ullah, "Parametric Variations of Transistor Doping Profiles for Ultra Low Power Applications," SSRG International Journal of VLSI & Signal Processing, vol. 5,  no. 3, pp. 23-27, 2018. Crossref, https://doi.org/10.14445/23942584/IJVSP-V5I3P103

Abstract:

The VLSI industry is facing the significant parasitic effects that creates a serious problem for further development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles for ultra-low power applications. With a comprehensive review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform between non-ideal and ideal environments. Also, both digital and analog performance parameters are measured to ensure the uniqueness of each doping profile. After getting a list of benefits from each doping profile that is presented in this paper, it is concluded to determine which doping profile works best against a host of parasitic effects. Finally, this paper also conclude that what type of possible applications do these doping profiles.

Keywords:

Subthreshold Swing, Uniform Doping, Gaussian Doping, Delta doping, and Ultra Low Power.

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